1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source features r ds(on) =24m (typ.), v gs = 10v, i d =44a q g(tot) = 24nc (typ.), v gs = 10v low miller charge low q rr body diode uis capability (single pulse and repetitive pulse) absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v drain current-continuous t c =25 44 a t a =25 7.2 a power dissipation 120 w derate above 25 0.8 w/ thermal resistance junction to ambient r ja 62 /w thermal resistance, junction-to-case r jc 1.25 /w channel temperature t ch 175 storage temperature t stg -55to+175 p d i d 4008-318-123 sales@twtysemi.com 1of 2 http://www.twtysemi.com smd type KDB3672 (fdb3672) smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
smd type electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain to source breakdown voltage v dss i d =250a v gs =0v 100 v v ds =80v,v gs =0 1 a v ds =80v,v gs =0,t c =150 250 a gate leakage current i gss v gs = 20v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250a 2.0 4.0 v v gs =10v,i d =44a 0.024 0.028 v gs =6v,i d =21a 0.031 0.047 v gs =10v,i d =44a,t c =175 0.054 0.068 input capacitance c iss 1710 pf output capacitance c oss 247 pf reverse transfer capacitance c rss 62 pf total gate charge at 10v q g(tot) v gs = 0v to 10v 24 31 nc threshold gate charge q g(th) v gs =0vto2v 3.5 4.5 nc gate to source gate charge q gs 11 nc gate charge threshold to plateau q gs2 7.2 nc gate to drain "miller" charge q gd 4.5 nc turn-on time t on 104 ns turn-on delay time t d(on) 11 ns rise time t r 59 ns turn-off delay time t d(off) 26 ns fall time t f 44 ns turn-off time t off 104 ns i sd =44a 1.25 v i sd =21a 1.0 v reverse recovery time tr r i sd = 44a, d isd /d t =100a/s 52 ns reverse recovered charge q rr i sd = 44a, d isd /d t =100a/s 80 nc source to drain diode voltage v sd v ds =25v,v gs =0,f=1mhz v ds =50v,i d =44a,i g =1.0ma drain cut-off current i dss v dd =50v,i d =44a, v gs =10v,r gs = 11.0 drain to source on-state resistance r ds(on) KDB3672 (fdb3672) 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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